发明名称 |
Susceptor designs for silicon carbide thin films |
摘要 |
A susceptor is disclosed for minimizing or eliminating thermal gradients that affect a substrate wafer during epitaxial growth. The susceptor comprises a first susceptor portion including a surface for receiving a semiconductor substrate wafer thereon, and a second susceptor portion facing the substrate-receiving surface and spaced from the substrate-receiving surface. The spacing is sufficiently large to permit the flow of gases therebetween for epitaxial growth on a substrate on the surface, while small enough for the second susceptor portion to heat the exposed face of a substrate to substantially the same temperature as the first susceptor portion heats the face of a substrate that is in direct contact with the substrate-receiving surface.
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申请公布号 |
US6217662(B1) |
申请公布日期 |
2001.04.17 |
申请号 |
US19970823365 |
申请日期 |
1997.03.24 |
申请人 |
CREE, INC. |
发明人 |
KONG HUA-SHUANG;CARTER, JR. CALVIN;SUMAKERIS JOSEPH |
分类号 |
C23C16/458;C30B25/12;H01L21/205;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/458 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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