SINGLE PHASE PEROVSKITE FERROELECTRIC FILM ON PLATINUM ELECTRODE, AND METHOD OF ITS FORMATION

摘要

PROBLEM TO BE SOLVED: To provide a ferroelectric device having a single-phase, high-quality ferroelectric film orientatively grown on a Pt electrode and a method of its formation. SOLUTION: The method for forming a ferroelectric film for a ferroelectric device for integrated circuit embraces steps of: (a) forming a first lower electrode layer of platinum (Pt) having a first fit crystal lattice structure; and (b) forming a single phase Perovskite ferroelectric film which has a second crystal lattice structure practically identical with the first fit crystal lattice structure and is formed on the first lower electrode layer and hereby forming an electrode having ferroelectricity on the Pt.