发明名称 PROCESSING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To form fine holes in a substrate. SOLUTION: This processing method forms holes by recording an etching pattern (an area removed by etching) in a substrate, forming a prior machine hole inside the etching pattern, and executing the isotropic etching according to the etching pattern. In the case that the substrate is a photosensitive glass substrate 101, a latent image 105 is formed by disposing a photo mask 102 in a prescribed position on the photosensitive glass substrate 101 and irradiating ultraviolet rays 106. Next, the latent image 105 is crystallized by heating the photosensitive glass substrate 101. A prior machine hole 107 smaller than the latent image 105 is formed at the center of a portion formed with the latent image 105 by laser light. Next, the photosensitive glass substrate 101 is etched by hydrofluoric acid. The crystallized portion is selectively etched to form a hole 108.</p>
申请公布号 JP2001105398(A) 申请公布日期 2001.04.17
申请号 JP20000019948 申请日期 2000.01.28
申请人 SEIKO EPSON CORP 发明人 USUI TAKAHIRO;UMETSU KAZUNARI;AMAKO ATSUSHI
分类号 B81C1/00;B23K26/00;B23K26/38;C03C15/00;G03F7/40;(IPC1-7):B81C1/00 主分类号 B81C1/00
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