| 摘要 |
PROBLEM TO BE SOLVED: To reduce the loss in the high frequency power for self bias voltage in a substrate treatment device making use of the incident energy of ions. SOLUTION: Gas is introduced in a treatment chamber 1 by a gas introduction system 22, the voltage is applied to a target by a sputter power source 21 to generate the sputter discharge, and the plasma is formed. A substrate holder 3 to hold a substrate 9 in the treatment chamber 1 comprises a holder body 31 and a dielectric block 32, a power source 41 for attraction of an electrostatic attraction mechanism 4 applies the voltage to an attraction electrode 42 in the dielectric block 32 to electrostatic-attract the substrate 9 to the surface of the dielectric block 32. The high frequency power source 5 applies the high frequency voltage to the attraction electrode 42, the self bias voltage is given to the substrate 9 by the interaction between the plasma and the high frequency, and the ions in the plasma are made incident in the substrate 9. The loss of the power is small since the high frequency power source 5 directly applies the high frequency voltage only to the attraction electrode 42.
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