发明名称 METHOD FOR PRODUCING SINGLE CRYSTAL FILM OF SUPERCONDUCTIVE OXIDE
摘要 PROBLEM TO BE SOLVED: To produce a single crystal film of a superconductive oxide, having a thickness of micron unit, i.e., of >=1μm and excellent characteristics, although the single crystal film has been hardly produced by the conventional process. SOLUTION: A superconductive oxide film containing excessive oxide is formed by heat treating a single crystal base plate of a bulky superconductive oxide such as La2CuO4 to convert it into a single crystal base plate of a non- superconductive oxide and then dipping the single crystal base plate thus obtained into an aqueous solution of permanganate at 40 to 200 deg.C to subject the surface of the single crystal base plate to chemical oxidation treatment and to introduce oxygen into the single crystal base plate.
申请公布号 JP2001106599(A) 申请公布日期 2001.04.17
申请号 JP19990283587 申请日期 1999.10.04
申请人 JAPAN SCIENCE & TECHNOLOGY CORP 发明人 TANAKA ISAO;WATAUCHI TOSHIJI;ASHIZAWA KEN
分类号 C01G1/00;C01G29/00;C30B29/22;(IPC1-7):C30B29/22 主分类号 C01G1/00
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