| 摘要 |
A gate oxide film is formed on a silicon substrate, and a gate electrode is formed on the gate oxide film. The gate electrode is a polysilicon film that is given p+ conductivity because of doping with B. An Si3N4 film is formed on the top surface of the gate electrode and sidewall spacers of Si3N4 are formed on the side walls of the gate electrode. An interlayer insulating film of SiO2 is formed on the Si3N4 film, the sidewall spacers, and a LOCOS oxide film. This structure inhibits diffusion of B from the gate electrode to the interlayer insulating film in a heating process that is executed after the formation of the gate electrode.
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