发明名称 |
Integrated semiconductor-magnetic random access memory system |
摘要 |
The present disclosure describes a non-volatile magnetic random access memory (RAM) system having a semiconductor control circuit and a magnetic array element. The integrated magnetic RAM system uses CMOS control circuit to read and write data magnetoresistively. The system provides a fast access, non-volatile, radiation hard, high density RAM for high speed computing.
|
申请公布号 |
US6219273(B1) |
申请公布日期 |
2001.04.17 |
申请号 |
US19990260920 |
申请日期 |
1999.03.02 |
申请人 |
CALIFORNIA INSTITUTE OF TECHNOLOGY |
发明人 |
KATTI ROMNEY R.;BLAES BRENT R. |
分类号 |
G11C11/15;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/15 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|