Method for fabricating mask ROM

摘要

A method for fabricating a mask ROM. Source/drain regions are formed in a provided substrate. Channels are formed between the adjacent source/drain regions. A plurality of code ion implant regions and a plurality of plug ion implant regions are formed in some channels and some source/drain regions, respectively. A dielectric layer is formed over the substrate. Contact openings are formed in the dielectric layer to expose the plug ion implant regions. Contact plugs are formed within the contact openings to electrically couple with the plug ion implant regions.