| 摘要 |
PROBLEM TO BE SOLVED: To provide an abrasive pad capable of securing high polishing rate and preventing the generation of scratch damage, and having excellent global flatness when polishing a surface of an insulating layer or a metal wiring formed on a semiconductor substrate. SOLUTION: This abrasive pad is made of the high molecular formed material having 3,500-40,000 kg/cm2 of bending elasticity. This D hardness of this abrasive pad is 55-70. |
