发明名称 Voltage-switching regulator with built-in voltage-switching module for a memory module
摘要 A voltage-switching regulator with built-in voltage-switching module is provided, which is capable of supplying a terminal voltage to a memory unit operating under DDR (DRAM of Double Rate) mode. The voltage-switching regulator is implemented as a single IC chip with a built-in voltage-switching module, and is capable of generating a terminal voltage in response to an input reference voltage and transferring the terminal voltage via a transmission logic line to the memory unit operating under DDR mode. The terminal voltage is pulled up when the voltage-switching module supplies a drive current and is pulled down when the voltage-switching module supplies a sink current. This allows the memory unit to be operated under DDR mode.
申请公布号 US6218817(B1) 申请公布日期 2001.04.17
申请号 US20000562678 申请日期 2000.05.02
申请人 VIA TECHNOLOGIES, INC. 发明人 CHANG NAI-SHUNG
分类号 G05F1/40;G05F1/46;G11C5/00;(IPC1-7):G05F1/40 主分类号 G05F1/40
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