| 摘要 |
A capacitor useful with semiconductor devices and a method for forming such a capacitor is provided. The capacitor comprises a contact formed in a layer of an insulating material of a semiconductor device; a first electrode formed on the layer of insulating material, the first electrode contacting the contact and having a nodular shape; a layer of a dielectric material formed on the first electrode; and a second electrode formed on the layer of the dielectric material. Desirably, the dielectric layer of the capacitor is formed from a high dielectric constant material. In another embodiment, the capacitor includes a layer of a barrier material positioned between the contact and the first electrode.
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