| 摘要 |
PROBLEM TO BE SOLVED: To produce a CVD source raw material different from the conventional one, to provide a bismuth layered compound fabricated by using the raw material, small in deterioration caused by rewrighting, high in cleanliness and suitable as a ferroelectric memory material, to provide a method for fabricating a semiconductor system using the bismuth layered compound and to provide a method for fabricating a ferroelectric memory. SOLUTION: The raw material for a chemical vapor phase growth method composed of an alkoxide raw material containing tantalum Ta and alkaline- earth metals in a unimolecule in the atomic ratio of 2:1 and a bismuth layered compound formed by the alkoxide raw material are composed. Moreover, by using the alkoxide raw material, the bismuth layered compound is formed by a chemical vapor phase growth method, and a semiconductor system having the bismuth layered compound on a substrate or a ferroelectric memory using the bismuth layered compound as a ferroelectric material is fabricated. |
