| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for treating a sample capable of securing a high etch rate even at a low sample temperature, free from a post-treating stage, e.g. of removing corrosive products and enough only by subjecting the components of chlorine used for plasma and remained to corrosion treatment, to provide a device therefor and to provide a method for fabricating a magnetic head. SOLUTION: A laminated film is deposited from a seed layer of an NiFe alloy, an upper magnetic pole of an NiFe alloy connected thereto, a gap layer of an oxidized film tightly adhered to the seed layer and a shield layer of an NiFe alloy tightly adhered to the gap layer, with the upper magnetic pole as a mask, the seed layer is subjected to plasma treatment and etching working by using a gas system containing chlorine, and, after that, the residual chlorine components are removed by executing removing and drying treatment with a liquid.
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