| 摘要 |
According to the present invention, a complex (M) which is formed by growing a polycrystalline beta-SiC plate 2 having a thickness of 10 mum or more on the surface of a single crystal alpha-SiC base material 1 by the PVD method or the thermal CVD method is heat-treated at a temperature of the range of 1,650 to 2,400° C., whereby polycrystals of the polycrystalline cubic beta-SiC plate 2 are transformed into a single crystal, and the single crystal oriented in the same direction as the crystal axis of the single crystal alpha-SiC base material 1 is grown. As a result, single crystal SiC of high quality which is substantially free from micropipe defects and defects affected by the micropipe defects can be produced easily and efficiently.
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