发明名称 Deposition of tungsten films from W(CO)6
摘要 A method of forming tungsten films on oxide layers is disclosed. The tungsten films are formed on the oxide layers by treating the oxide using a silane based gas mixture followed by the thermal decomposition of a W(CO)6 precursor. After the W(CO)6 precursor is thermally decomposed, additional layer of tungsten may be optionally formed thereon from the thermal decomposition of tungsten hexafluoride (WF6).
申请公布号 US6218301(B1) 申请公布日期 2001.04.17
申请号 US20000628592 申请日期 2000.07.31
申请人 APPLIED MATERIALS, INC. 发明人 YOON HYUNGSUK ALEXANDER;YANG MICHAEL X.;XI MING
分类号 C23C16/16;H01L21/20;H01L21/28;H01L21/285;H01L21/3205;H01L21/768;(IPC1-7):H01L21/44 主分类号 C23C16/16
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