发明名称 Method of patterning metal layers by annealing a metal layer formed over a patterned metal-containing adhesion layer
摘要 The present invention provides a method for forming a discontinuous conductive layer in the fabrication of integrated circuits. The method includes providing a substrate assembly having a surface including at least one metal-containing adhesion region separated by at least one surface region of the substrate assembly. A conductive metal layer is formed on the surface of the substrate assembly. The substrate assembly including the conductive metal layer thereon in then annealed. Any nonadhered conductive metal is removed from the at least one exposed surface region to form a discontinuous conductive metal layer on at least one metal-containing adhesion region, for example, by simply rising the substrate assembly in water. The conductive metal layer can be platinum or ruthenium.
申请公布号 US6218297(B1) 申请公布日期 2001.04.17
申请号 US19980146408 申请日期 1998.09.03
申请人 MICRON TECHNOLOGY, INC. 发明人 MARSH EUGENE P.
分类号 H01L21/02;H01L21/768;(IPC1-7):H01L21/44 主分类号 H01L21/02
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