| 摘要 |
A method of manufacturing a transistor capable of obtaining a BICMOS while making the difference in the number of manufacturing processes from a CMOS smaller, includes the steps of: separating an element region in a semiconductor substrate; forming a emitter opening for deciding upon an emitter layer in an insulating film on the semiconductor substrate, forming a polysilicon film on the insulating film and in the emitter opening; implanting selectively impurity ions into the semiconductor substrate through the polysilicon film and the insulating film to form a collector layer and a base layer; and performing heat treatment for activating impurities in the base layer and the collector layer and diffusing impurities into the semiconductor substrate from the polysilicon film to form an emitter diffused layer.
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