发明名称 |
Method for removing photoresist layer |
摘要 |
A method described for removing a photoresist/polymers layer on a substrate. The method comprises the steps of providing a wafer having an oxide layer, a photoresist/polymers layer, an opening penetrating through the photoresist/polymers layer and the oxide layer, and the sidewall polymer on the surface of photoresist layer and the oxide layer. An in-situ plasma-etching step using an additional gas mixed with oxygen as source is performed to remove the photoresist/polymers layer without residues, no damages to substrate and oxide and no changes on the critical dimension of the opening during etching step.
|
申请公布号 |
US6218084(B1) |
申请公布日期 |
2001.04.17 |
申请号 |
US19980212727 |
申请日期 |
1998.12.15 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
YANG CHAN-LON;CHEN TONG-YU;HUANG MICHAEL W C |
分类号 |
G03F7/42;H01L21/311;(IPC1-7):G03F7/42 |
主分类号 |
G03F7/42 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|