| 摘要 |
A sputtering target disk is provided which is comprised of a sintered silicon carbide having a density of 2.9 g/cm3 or more and obtained by sintering a uniform mixture of a powder of silicon carbide and a nonmetallic auxiliary sintering agent. The sputtering target disk is advantageously used in a sputtering treatment to form thin films with high purity which are suitable for use in various parts of electronic devices. The sputtering target disk exhibits excellent mechanical properties, electric properties, and durability against uneven wear.
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