发明名称 |
SINGLE PHASE PEROVSKITE FERROELECTRIC FILM ON PLATINUM ELECTRODE, AND METHOD OF ITS FORMATION |
摘要 |
PURPOSE: A single phase perovskite ferroelectric film on platinum electrode, and method of its formation is provided to achieve high-quality ferroelectric film orientatively grown on a Pt electrode and a method of its formation. CONSTITUTION: The method for forming a ferroelectric film includes the steps of forming a first lower electrode layer of platinum(Pt) having a first fit crystal lattice structure in step 14; and forming a single phase Perovskite ferroelectric film which has a second crystal lattice structure practically identical with the first fit crystal lattice structure and is formed on the first lower electrode layer and hereby forming an electrode having ferroelectricity on the Pt in steps 15b and 16.
|
申请公布号 |
KR20010030026(A) |
申请公布日期 |
2001.04.16 |
申请号 |
KR20000043629 |
申请日期 |
2000.07.28 |
申请人 |
SHARP CORPORATION |
发明人 |
LI TINGKAI;SHIEN TEN SUU;ZHANG FENGYAN |
分类号 |
C23C16/40;H01L21/02;H01L21/316;H01L21/822;H01L21/8246;H01L27/04;H01L27/105;(IPC1-7):H01L27/105 |
主分类号 |
C23C16/40 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|