| 摘要 |
<p>PURPOSE: To form a gate insulation film of a good quality on a semiconductor film of a good quality, by providing a mechanism for so unifying the intensities of the beam to be exposed on an optical mask in a predetermined region that their distribution falls in a specific scope. CONSTITUTION: Pulse UV beams fed from first and second excimer lasers EL1, EL2 are led to a homogenizer opt20' via a class of mirrors opt3, opt3' and a class of lenses opt4. Hereupon, there is provided a mechanism of the homogenizer opt20' for so unifying the intensity profiles of the beam that they have a desired uniformity in the predetermined region of an optical mask opt21, i.e., they are included within the scope of±11.2% of the average intensity of the beam in the region. As a result, in the desired region exposed to the beam of a pattern, even in the application case to such an image device as an LCD, there are prevented the damage of a substrate caused by the variation of the intensities of a light source and the reduction of a picture quality caused by the variation.</p> |
