发明名称 |
METHOD FOR INCREASING SIZE OF CAPACITOR OF VERY LARGE SCALE INTEGRATED CIRCUIT ON BULK SILICON WAFER AND SILICON-ON-INSULATOR WAFER AND STRUCTURE MANUFACTURED THEREBY |
摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to form an inexpensive capacitor without additional cost, and to increase the density of the capacitor by increasing a ratio of a silicon width to an interval between adjacent islands so that a sub-lithography characteristic is patterned. CONSTITUTION: At least one conductive island having a predetermined sidewall angle in a conductive substrate is formed. A dielectric material is formed on at least one conductive island. A conductive material is formed on the dielectric material. A contact between the conductive material and at least one conductive island is formed.
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申请公布号 |
KR20010029757(A) |
申请公布日期 |
2001.04.16 |
申请号 |
KR20000029105 |
申请日期 |
2000.05.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LOUIS L. SHU;WANG LI KONG |
分类号 |
H01L29/78;H01L21/02;H01L21/334;H01L27/08;H01L27/12;H01L29/94;(IPC1-7):H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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