| 摘要 |
PURPOSE: To form a satisfactory self-aligned contact structure while forming an LDD structure on the same substrate, even though, the structure is made fine to have its inter-gate space reduced. CONSTITUTION: A process for forming a gate electrode 4 on a semiconductor substrate 1, a process for forming an LDD region 7 in a 1st element region and a source/drain region 11 in a 2nd element region, a process for forming a silicon nitride film in the 1st and 2nd element areas, a process for forming and etching back a silicon oxide film in the 1st and 2nd element regions and forming a side wall in the 1st element region and a silicon oxide film in the inter-gate space in the 2nd element region, a process for forming an LDD structure by forming a source/drain region 11 by implanting ions into the 1st element region through the silicon nitride film, and a process for etching the sidewall in the 1st element region and the silicon oxide film in the inter-gate space in the 2nd element region in wet condition out after performing a heat treatment in a nitrogen atmosphere are carried out.
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