| 摘要 |
PURPOSE: An inexpensive and high performance magnetoresistive effect element of a thin film is provided to reduce the manufacturing costs and realize high performance. CONSTITUTION: An intermediate layer(35) in which the magnetization of a ferromagnetic layer is connected with the direction of 90 deg. is inserted into a clearance between pin layers(33,37), so that heat treatment for forming the mono-magnetic domain of a free layer(41) by a anti-ferromagnetic body(43) and heat treatment for fixing the magnetization of the pin layer can be simultaneously operated. Thus, it is possible to unnecessitate any difference between the blocking temperatures of the anti-ferromagnetic body(43) brought into contact with the free layer(41) and that of the anti-ferromagnetic layer(31) brought into contact with the pin layer(33), and to select the anti-ferromagnetic layer having high interchangeable connecting magnetic field and a high blocking temperature. Also, it is possible to widen an allowable range for the distribution of the interchangeable connecting magnetic field, to realize the thin film of the anti-ferromagnetic layer, and to apply this element to a magnetic reproducing head requiring a narrow gap.
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