| 摘要 |
PURPOSE: A semiconductor memory is provided to make the memory cells fine in a semiconductor memory and to reduce the chip size of the memory by using transistors other than those used as select transistors. CONSTITUTION: A semiconductor memory is constituted in such a way that a twin well composed of an n-type well area(22) and a p-type well area(23) is formed in a p-type silicon substrate(21). Memory cells are formed in the well area(23), and a buffer layer(25) is formed on the well area(23) and an element separating layer(24). In addition, a ferroelectric film(26) is formed on the buffer layer(25). Namely, the buffer layer(25) is arranged between the p-type well area(23) and ferroelectric film(26) so as to prevent the mutual diffusion of atoms between the area(23) and film(26).
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