| 摘要 |
PURPOSE: A transistor structure of zirconium dielectric film doped with aluminum and its deposition method is provided to form a high dielectric film wherein electrical leak is reduced by incorporating a trivalent metal and a metal selected from a group consisting of zirconium and hafnium and further incorporating oxygen. CONSTITUTION: An integrated circuit having one surface is provided(10), and one precursor comprising a trivalent metal selected from a group consisting of aluminum, scandium and lanthanum and a metal selected from a group consisting of zirconium and hafnium is prepared. Then, after the precursor is gasified, atmosphere comprising oxygen is established(12). A precursor is decomposed on an IC surface in this way and an alloy film comprising a metal selected from a group consisting of zirconium and hafnium and a trivalent metal and oxygen is deposited by CVD(16). Furthermore, it is annealed(18) and a thin film with high dielectric ratio and good insulation property is formed(20).
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