| 摘要 |
PURPOSE: To obtain a method for fabricating a semiconductor device in which a polycide electrode having low layer resistance, high layer resistance stability and stabilized profile can be formed. CONSTITUTION: The method for fabricating a semiconductor device comprises a step for forming a polysilicon film 36 containing impurities on a semiconductor substrate 30 through a gate insulation film 34 when the gate electrode of a MOSFET is formed, a step for forming an amorphous titanium silicide film 38 having composition ratio of Ti and Si in the range of 1:2.3 to 1:2.5 on the polysilicon film by sputtering, a step for crystallizing the amorphous titanium silicide film by heat treatment, a step for patterning a multilayer film of the titanium silicide film and the polysilicon film according to the profile of a gate electrode, and a step for forming a thin film of SiO2 on the substrate surface and the side face of the multilayer film forming the gate electrode by subjecting the substrate on which the gate electrode is formed to quick thermal oxidation.
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