| 摘要 |
PURPOSE: A semiconductor storage device is provided to prevent an erroneous readout from being caused, even if the manufacturing process of a semiconductor storage device is varied and to enable obtaining stable readout characteristics of the device. CONSTITUTION: A pair of reference cells(77, 78) are formed in the same structure as that of one pair of memory cells(51, 52) and are arranged in the same direction on a semiconductor substrate. The source-drain directions of the cell(51) and the cell(77) (an even number of cells) are matched with each other, and the source-drain directions of the cell(52) and the cell(78) (an odd number of cells) coincide with each other. Provided is a selector circuit(79) for selecting the cells(77, 78), where when the cell(51) is selected, the cell(77) is selected and when the cell(52) is selected, the cell(78) is selected.
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