发明名称 |
FIELD EMITTER EQUIPPED WITH CARBON NANOTUBE FILM, METHOD FOR MANUFACTURING THE SAME, AND FIELD EMISSION DISPLAY DEVICE |
摘要 |
PURPOSE: Provided is a field emitter equipped with a carbon nanotube film with which a thin film transistor is used in manufacturing a field emission display device having high density of electricity and operating at low voltage. CONSTITUTION: A field emitter includes a substrate (8), a thin film transistor section formed on the substrate (8) and composed of a semiconductor layer (7), especially polycrystalline silicon layer, source electrode (3), drain electrode (4), and gate electrode (2), and a current discharge section composed of carbon nanotube films formed on the drain electrode (4) of the thin film transistor section. The structure of the thin film transistor section is among a plane, stacker, and counter stacker form. And the surface of the drain electrode (4) which the carbon nanotube film connects to includes transition metals like nickel or cobalt for the growth of the carbon nanotube or the drain electrode (4) is made of catalytic metals.
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申请公布号 |
KR20010029785(A) |
申请公布日期 |
2001.04.16 |
申请号 |
KR20000030803 |
申请日期 |
2000.06.05 |
申请人 |
ILJINNANOTECH INC.;JANG, JIN |
发明人 |
JANG, JIN;JUNG, SEOK JAE;LIM, SEONG HUN;YOO, JAE EUN |
分类号 |
H01J1/304;(IPC1-7):H01J1/304 |
主分类号 |
H01J1/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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