发明名称 |
METHOD AND APPARATUS FOR CONTROLLING TEMPERATURE OF SEMICONDUCTOR SUBSTRATE |
摘要 |
PURPOSE: A method and apparatus for controlling temperature of semiconductor substrate is provided to supply a uniform temperature over the whole wafer support surface of a wafer support pedestal by quickly adjusting the temperature of a wafer to a prescribed value and maintaining the wafer at the temperature. CONSTITUTION: The semiconductor wafer processing apparatus has a substrate support(400), an isolator(406) disposed beneath substrate support, and; an external heat transfer plate(408) disposed beneath isolator. The semiconductor wafer placed on the support pedestal is maintained uniformly at a prescribed temperature by heating the wafer with one or more electrodes embedded in the substrate support and cooling the wafer with a fluid passing through the first and second heat transfer plates. |
申请公布号 |
KR20010030052(A) |
申请公布日期 |
2001.04.16 |
申请号 |
KR20000045014 |
申请日期 |
2000.08.03 |
申请人 |
APPLIED MATERIALS INC. |
发明人 |
EXLINE PAUL;KOOSAU DENNIS;LUBOMIRSKY DMITRY;MOK YEUK-FAI EDWIN;THACH SENH;WANG DANNY |
分类号 |
H01L21/302;H01L21/00;H01L21/205;H01L21/3065;H01L21/68;H01L21/687;(IPC1-7):H01L21/68 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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