发明名称 METHOD AND APPARATUS FOR CONTROLLING TEMPERATURE OF SEMICONDUCTOR SUBSTRATE
摘要 PURPOSE: A method and apparatus for controlling temperature of semiconductor substrate is provided to supply a uniform temperature over the whole wafer support surface of a wafer support pedestal by quickly adjusting the temperature of a wafer to a prescribed value and maintaining the wafer at the temperature. CONSTITUTION: The semiconductor wafer processing apparatus has a substrate support(400), an isolator(406) disposed beneath substrate support, and; an external heat transfer plate(408) disposed beneath isolator. The semiconductor wafer placed on the support pedestal is maintained uniformly at a prescribed temperature by heating the wafer with one or more electrodes embedded in the substrate support and cooling the wafer with a fluid passing through the first and second heat transfer plates.
申请公布号 KR20010030052(A) 申请公布日期 2001.04.16
申请号 KR20000045014 申请日期 2000.08.03
申请人 APPLIED MATERIALS INC. 发明人 EXLINE PAUL;KOOSAU DENNIS;LUBOMIRSKY DMITRY;MOK YEUK-FAI EDWIN;THACH SENH;WANG DANNY
分类号 H01L21/302;H01L21/00;H01L21/205;H01L21/3065;H01L21/68;H01L21/687;(IPC1-7):H01L21/68 主分类号 H01L21/302
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