SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, AND MANUFACTURE AND OPERATION THEREOF

摘要

PURPOSE: To aim at miniaturization of a semiconductor integrated circuit device and the speeding up of the operating speed of the device and also to aim at reduction in the defect density in insulating films in the device having third gates. CONSTITUTION: A semiconductor circuit device has a first conductivity-type well 101 formed in a semiconductor substrate 100, second conductivity type source/drain diffused layer regions 105 in a well 101, floating gates 103b formed on the substrate 100 via an insulating film 102, control gates 111a formed via each gate 103b and an insulating film 110a, a word line formed by connecting the gates 111a with each other and third gates 107a which are formed via the substrate 100, the gates 103b, the gates 111a and the film 110a and are different from the gates 103b and the gates 111a. In this case, the above gates 107a are arranged, in such a way that the gates 107a are embedded and exist in the gaps between the gates 103b existing in the directions vertical to the word line and a channel.