SEMICONDUCTOR AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A semiconductor and a method for fabricating the same are provided to perform efficiently a counter measure about a power noise by forming a capacitor in a desired position. CONSTITUTION: An interlayer dielectric is formed on a silicon substrate(101) by performing a CVD(Chemical Vapor Deposition) method. A photo-resist pattern is formed by performing a photo-lithography process. The interlayer dielectric is etched by using the photo-resist pattern as a mask. An aluminium film is formed by performing a metal film formation process using a depressing CVD method. A plurality of through-hole(B11,B12) is formed on the silicon substrate(101) by filling an aluminium film therein. A plurality of metal lines(M11,M12) is formed on the through-holes(B11,B12).