| 摘要 |
PURPOSE: To provide a highly integrated semiconductor device with high performance in a simple high-yield process, by realizing a high-performance semiconductor element with uniform and stable characteristics. CONSTITUTION: The manufacturing step of a semiconductor device includes a step for adding a catalytic element Ni 104 for promoting crystallization to an amorphous silicon film 103 formed on a substrate with an insulating surface, a step for growing crystallization of the amorphous silicon film 103 in heat treatment and stopping the crystallization, while there still remains a micro amorphous region (non-crystallization region), and a step for irradiating a strong light beam (laser beam) 105 to the silicon film with the crystallization growth that is stopped while there still remains a micro amorphous region (non- crystallization region), and carrying out more crystallization of the silicon film. As a result, crystallized silicon film with high quality and uniformity, that reflects advantage in crystallization in microscopic order of the silicon film 103a crystallized by using a catalytic element Ni. |
