| 摘要 |
PURPOSE: A semiconductor device is provided to solve a problem of a difficult when providing a short process a low-resistance contact plug which is free from a diffusion layer leakage to a memory cell part of shallow junction, or a low-resistance contact plug to a peripheral circuit of comparatively deep junction other than a memory cell part in a multi-functional semiconductor device, which includes fine memory cells. CONSTITUTION: An interval between gate electrodes(181) in a memory cell part(180) and another interval between gate electrodes(182) in a peripheral circuit part are set so as to have a certain relation with the width of the sidewall insulating films(183) and(184) of a gate electrode, and furthermore a contact(167) is selectively bored in a memory cell part(180) first taking advantage of a stopper film(185), the base of the contact(167) is filled with a silicon layer(170), by which an optimal electrode structure can be formed on an N-type diffusion layer(164) in the memory cell part(180) and an N-type diffusion layer(165) in the peripheral circuit part, respectively. |
