| 摘要 |
PURPOSE: To provide a plasma processing device capable of processing of high quality under process conditions in wider ranges by fixedly retaining the distance between a plasma region and a substrate even in the case in which process conditions such as process pressure and high-frequency output are different. CONSTITUTION: A plasma chamber 1 is divided into a lower plasma chamber 1B and an upper plasma chamber 1T. A process chamber 2 and the lower plasma chamber 1B are flexibly connected by lower chamber bellows 24, and the lower plasma chamber 1B and the upper plasma chamber 1T are flexibly connected by upper chamber bellows 25. Since, in the case the process pressure is low, a plasma region 30 is made large, the lower plasma chamber 1B and the upper plasma chamber 1T are elevated, respectively, and conversely, since, in the case the process pressure is high, the plasma region 30 is made small, the lower plasma chamber 1b and the upper plasma chamber 1T are lowered, respectively.
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