| 摘要 |
PURPOSE: To reduce particles in amount and also enable plasma to be uniformly introduced to a work. CONSTITUTION: A pair of an upper and a lower electrode, 118 and 106, are arranged in the processing chamber 102 of an etching device 100. The peripheral edge of the upper electrode 118 is covered with a first ring-shaped body 122, and a cylinder 124 is provided around the ring-shaped body 122. A second ring- shaped body 116 is provided around the lower electrode 106. When the lower electrode 106 is arranged at a processing position, the second ring-shaped body 16 is positioned inside the cylinder 124, and a plasma space 102a is formed. An exhaust path 142 is formed between the cylinder 124 and the second ring- shaped body 116. A space between the cylinder 124 and the second ring-shaped body 116 is so set as to enable the exhaust path 142 to get higher in gas conductance than the plasma space 102a. The cylinder 124 and the ring-shaped bodies 122 and 116 are heated by plasma.
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