| 摘要 |
PURPOSE: To provide a nonvolatile semiconductor memory in which batch read/ write can be carried out without replacing a defective memory cell by a redundant cell array. CONSTITUTION: The nonvolatile semiconductor memory comprises a memory cell array 1, a row decoder 2 and a column decoder 4, a sense amplifier circuit 3, a circuit 9 generating a drive voltage boosted depending on write/erase of data, and a failure block detection circuit 10 for detecting a block containing a failure memory cell by detecting the potential of a signal line driven with a drive voltage generated from the drive voltage generating circuit 9 and temporarily storing the detected block. The failure block detection circuit 10 is activated in the initial stage of test control sequence when batch write test is performed in units of batch erase or write for unit erase of the memory cell array 1 and a control circuit 7 controls interruption of drive voltage supply to a failure memory cell based on the output from the failure block detection circuit 10 in the test sequence thereof.
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