发明名称 |
Deposition of metal carbide film on substrate, e.g. integrated circuit, involves atomic layer deposition |
摘要 |
A transition metal carbide is deposited by atomic layer deposition. An independent claim is also included for a method of producing an electron conductor in an integrated circuit by atomic layer deposition process, such that each of the cycles involves exposing an adsorbed metal complex on a substrate to a carbon compound. |
申请公布号 |
FI19992235(A) |
申请公布日期 |
2001.04.16 |
申请号 |
FI19990002235 |
申请日期 |
1999.10.15 |
申请人 |
ASM MICROCHEMISTRY LTD, |
发明人 |
ELERS,KAI-ERIK;SAANILA,VILLE;KAIPIO,SARI;SOININEN,PEKKA |
分类号 |
C23C16/44;C30B25/02 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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