| 摘要 |
PURPOSE: To provide a semiconductor light emitting element laminated substrate, which is capable of easily separating a base substrate from it by etching, a semiconductor device, a method of manufacturing them, and a semiconductor crystal substrate and a semiconductor device obtained through the method. CONSTITUTION: A semiconductor crystal GaN layer 14 is grown on a sapphire base substrate 11 through the intermediary of an AlN isolation layer 12 and a GaN buffer layer 13. The isolation layers 12 and the buffer layers 13 are formed dispersedly in lines, and etchant flow holes 16 are provided in the side of t layers 12 and 13 through the intermediary of an SiO2 growth stop film 15. By this setup, an etchant flows through the flow holes 16, the growth preventing film 15 and the isolation layer 12 are etched, and the base substrate 11 is isolated easily. |
