| 摘要 |
PURPOSE: To enable a thin film of high quality to be formed of PZT ferroelectric material at a low temperature through a sol-gel method by a method wherein a buffer layer is formed on a substrate, a ferroelectric thin film material is applied thereon, and the buffer layer and the ferroelectric thin film are thermally decomposed in one lot and subjected to a crystallization thermal treatment. CONSTITUTION: A buffer layer of PbTiO3 is formed on a substrate, and then the substrate is baked at a certain temperature at which organic thermal decomposition hardly occurs. Then, thin film material whose main component is PZT is applied on the buffer layer of PbTiO3, and the substrate is baked at a temperature where organic thermal decomposition hardly occurs. Thereafter, the buffer layer of PbTiO3 and the thin film material of PZT are subjected to organic thermal decomposition in one lot and then undergoes a crystallization thermal treatment, and then a series of processes where film material of PZT is applied on the buffer layer of PbTiO3, an organic thermal decomposition is carried out, and a crystallization thermal treatment is performed may be repeatedly carried out until a PZT thin film gets thick enough as prescribed.
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