PHOTORESIST REMOVING SOLUTION AND METHOD FOR REMOVING PHOTORESIST USING THE REMOVING SOLUTION

摘要

PURPOSE: To provide a photoresists removing solution excellent in ability to remove residue such as a degenerated photoresist film produced after ashing and residue on etching (metal deposition) and excellent in property of preventing the corrosion of a substrate in rising with water and to provide a method for removing a photoresist using the removing solution. CONSTITUTION: The salt of hydrofluoric acid and a metal ion-free base, a water- soluble organic solvent, a basic material and water are blended to obtain the objective photoresist removing solution. A substrate is subjected to etching and ashing in succession with a photoresist pattern formed on the substrate as a mask, the photoresist pattern is removed using the removing solution and then the substrate is rinsed with water.