发明名称 |
FILM FORMING METHOD AND FILM FORMING SYSTEM |
摘要 |
PURPOSE: A film forming method and film forming system is provided to simplify the process of forming two-layer structure of insulation film and hard mask layer without using a CVD device. CONSTITUTION: A film forming method comprises the steps of forming a first coating film by providing a first coating liquid onto a substrate; and a second step of forming a second coating film by providing a second coating liquid onto the first coating film, wherein at least one of first and second coating films is an inorganic film. A film forming system comprises a cassette station for delivering/supplying wafers in cassette units from/to the film forming system; a first treatment station having a plurality of treatment units for performing predetermined treatments during an insulation film forming process; an interface unit arranged to be adjacent to the first treatment station, and which conveys wafers; and a second treatment station having a heat treatment furnace performing a heat treatment in a batch manner.
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申请公布号 |
KR20010029808(A) |
申请公布日期 |
2001.04.16 |
申请号 |
KR20000033205 |
申请日期 |
2000.06.16 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KONISHI NOBUO;MIZUTANI YOJI;TOSHIMA TAKAYUKI |
分类号 |
H01L21/3105;H01L21/00;(IPC1-7):H01L21/310 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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