发明名称 FILM FORMING METHOD AND FILM FORMING SYSTEM
摘要 PURPOSE: A film forming method and film forming system is provided to simplify the process of forming two-layer structure of insulation film and hard mask layer without using a CVD device. CONSTITUTION: A film forming method comprises the steps of forming a first coating film by providing a first coating liquid onto a substrate; and a second step of forming a second coating film by providing a second coating liquid onto the first coating film, wherein at least one of first and second coating films is an inorganic film. A film forming system comprises a cassette station for delivering/supplying wafers in cassette units from/to the film forming system; a first treatment station having a plurality of treatment units for performing predetermined treatments during an insulation film forming process; an interface unit arranged to be adjacent to the first treatment station, and which conveys wafers; and a second treatment station having a heat treatment furnace performing a heat treatment in a batch manner.
申请公布号 KR20010029808(A) 申请公布日期 2001.04.16
申请号 KR20000033205 申请日期 2000.06.16
申请人 TOKYO ELECTRON LIMITED 发明人 KONISHI NOBUO;MIZUTANI YOJI;TOSHIMA TAKAYUKI
分类号 H01L21/3105;H01L21/00;(IPC1-7):H01L21/310 主分类号 H01L21/3105
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