INTEGRATED METHOD AND APPARATUS FOR FORMING ENHANCED CAPACITOR

摘要

PURPOSE: Integrated method and apparatus for forming an enhanced capacitor is provided to enable the formation and integration of high quality, high dielectric constant metal-oxide dielectric layers and high quality, low resistance metal-nitride layers at low temperatures. CONSTITUTION: According to an embodiment of the present invention a substrate having a bottom metal electrode is placed in a deposition chamber. The bottom electrode is then exposed to remotely generated nitrogen radicals to passivate the metal electrode. Next, a high dielectric constant metal-oxide dielectric layer such as tantalum pentaoxide (TaO5) or titanium (Ti) doped tantalum pentaoxide (TaO5) or titanium oxide (TiO) is formed over the electrode. The metal-oxide dielectric film is then annealed with remotely generated by activated oxygen atoms. Annealing the metal-oxide dielectric layer with activated oxygen atoms fills vacancies in the metal-oxide dielectric which helps reduce leakage current.