| 摘要 |
PURPOSE: A method for etching insulation layer and a method for fabricating semiconductor elements are provided to scavenge a free fluorine by a carbon monoxide with no longer present to allow the further breakup of the octofluorobutene into excessive amounts of free fluorine. CONSTITUTION: Manifold etching can be used for insulating layers(114,400,422,426). In the example of one group, the insulation layers(114,400,422,426) are etched using an oxide etching component, a fluorescent scavenging component and an organic etching component. In another example of a set, the insulating layers(114, 400, 422,426) comprise at least 1 atomic weight % of carbon or hydrogen. The insulation layers are etched using oxide etching gas and gas containing nitrogen. In another of a different group, the insulation layers(114, 400, 422,426) are formed on a semiconductor element substrate(100) having a diameter of about 300 millimeters. The insulation layers(114, 400, 422,426) are etched by using oxide etching gas and a gas containing nitride.
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