| 摘要 |
PURPOSE: To provide a semiconductor memory which can perform stable, high- speed reading operation while not incurring an increase in a chip size. CONSTITUTION: Bank select lines BKL1 and BKL2 are positioned closely to each other while a width w2 of a channel region Ch of transistors BK1, BK2, BK3 and BK4 for bank selection is kept wide, and also bank select lines BKL3 and BLK4 are positioned closely to each other. For this reason, an increase in a chip size can be suppressed without grading a current supply ability of the transistors BK1, BK2 and BK3 for bank selection and thus without reducing a reading speed from a memory cell.
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