| 摘要 |
PURPOSE:To contrive the improvement in manufacturing yield by performing a step of forming discrete photodetectors and a step of forming a protective film continuously in a high-frequency glow discharge device under a reduced pressure. CONSTITUTION:On a transparent insulating substrate 11, a common transparent electrode 12 is spread and an a-Si layer 13 which will become a photosensitive layer is deposited. This a-Si layer 13 is composed of a three-layer structure of N-type, I-type and P-type layers in order from the side of the substrate 11 and the common transparent electrode 12, and it is fabricated at a low temperature by decomposing silane gas under a reduced pressure by a high-frequency glow discharge. When the a-Si layer 13 is laminated, a part of the common transparent electrode 12 is covered with a mask of a thin metallic film or the like and a metallic film 25 is evaporated on them and is patterned by photolithographic etching. A discrete electrode 14, a common auxiliary metallic electrode 17, a die pad 18 for IC, an IC input line 19 etc. are formed. Furthermore, after removing the a-Si layer 13, a protective film 15 is spread over the entire surface. Consequently, a manufacturing yield is improved and a manufacturing cost is reduced. |
