| 摘要 |
PURPOSE:To uniformize the interelement isolation capacities by a method wherein a plurality of isolated grooves having the prescribed width and depth are formed from the circumferential parts of a semiconductor substrate toward its central part, connected at its central part in the prescribe state and the lengths of the isolated grooves ranging from the circumferential parts to this connected part are made nearly equal. CONSTITUTION:A substrate 1 is formed of a compound semiconductor crystal, such impurities an Sn and Te are introduced in an N-type impurity layer 2 which is used as an active layer, such impurities as Sn and Te are introduced in an N<++> impurity layer 3 as well and an insulating film 8 is formed on the N-type impurity layer 2. Schottky electrodes 5 are ones formed by laminating a Ti film, a Pt film and an Au film and ohmic electrodes 6 are formed by laminating an Au-Ge alloy film and an Ni film. The side surfaces of isolated grooves 10 formed from the interior of the surface of the substrate 1 through the lower part of the N<++> impurity layer 3 for demarcating regions 11 are vertical to the surface of the substrate 1. A high-molecular resin film 12, which is provided on the upper surface of the substrate 1 as an insulating film and consists of such a resin as a polyimide, is introduced in the isolated grooves as well for making sure of an element isolation by these isolated grooves 10. By making nearly equal the lengths of the isolated grooves 10 ranging up to the connected part, the interelement isolation capacities can be uniformized. |
