| 摘要 |
PURPOSE:To easily perform the adjustment of the forward characteristics and the backward characteristics by adjusting the ratio of the contact areas of both metal layers to a semiconductor substrate to the prescribed ratio. CONSTITUTION:An oxide film (SiO2 film) 2 is adhered on an Si substrate 1 and after the central part of the film 2 is removed, a first barrier metal layer 4 is formed by evaporating Mos in a lattice type by a mask evaporation. Then, a second barrier metal layer 5 is formed thereon by the entire surface evaporation of Tis. The ratio of the contact areas of the first barrier metal layer 4 and the second barrier metal layer 5 to the Si substrate can be adjusted to an arbitrary value by adjusting the dimension of the first barrier metal layer 4 to be evaporated first. When the ratio of the contact area of the Tis having the phiB of 0.48V to the Si substrate is made larger, the forward rise voltage becomes smaller and when the ratio of the contact area of the Mos having the phiB of 0.67V to the Si substrate is made larger, the rise voltage becomes larger. Reversely, the backward leakage current is increased as the ratio of the contact area of the Tis becomes larger, and is decreased when the ratio of the contact area of the Mos becomes larger. |
