发明名称 DEVELOPMENT ENDPOINT DETECTING METHOD
摘要 PURPOSE:To improve both reproducibility and accuracy of a pattern by a method wherein the time from the point of time when the aperture of a resist is detected to the time determined by the optimum development factor is added to the developing period of time. CONSTITUTION:A laser beam is made to irradiate on the resist 13 to be used for monitoring from a light emitting part 14, and when an aperture is perforated on the resist 13 and a wafer is exposed, the laser beam is reflected, and the reflected light is detected by the light-receiving part 15 arranged at the point designed in advance. As the starting point of developing is the time when the valve to be used for a nozzle 16 is opened, the time between when the valve is opened and the reflected light is detected by the light-receiving part 15 is measured, and the prescribed development time is additionally set for the development time of the resist to be used for monitoring. As a result, the desired pattern can be formed with a small degree of variability in a highly accurate manner.
申请公布号 JPS62193247(A) 申请公布日期 1987.08.25
申请号 JP19860033955 申请日期 1986.02.20
申请人 FUJITSU LTD 发明人 OSHIO SHUZO
分类号 H01L21/30;G03F7/00;G03F7/30;H01L21/027 主分类号 H01L21/30
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