| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory having self-aligned contact and its manufacturing method. SOLUTION: After forming a first insulation film 23 on a semiconductor substrate 1 having a gate electrode, at least one first opening and at least one second opening 25b', from which an active region 21 of the semiconductor substrate 1 is exposed, are formed. Each opening is filled with a conductive material to form a first pad layer and a second pad layer 25b'. After forming a fist interlayer insulation film 27 on the first insulation layer 23, a third opening from which the surface of the first pad layer is exposed, is formed and filled, and at the same time, several bit lines 29 orthogonal to the gate electrode are formed, and an insulation spacer 33 is provided only to each of their sidewalls. After forming a second interlayer insulation film 35, a fourth opening 37, which is self-adjusted to the insulation spacers 33 and exposes the surface of the second pad layer 25b', is formed and filled with a conductive material, on which a storage electrode 39 is formed. |
